? 2008 ixys corporation, all rights reserved ds99895a(12/08) trenchhv tm power mosfet hiperfet tm n-channel enhancement mode avalanche rated symbol test conditions maximum ratings v dss t j = 25 c to 175 c 175 v v dgr t j = 25 c to 175 c, r gs = 1m 175 v v gsm transient 30 v i d25 t c = 25 c 150 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 400 a i a t c = 25 c75 a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss , t j 175 c 15 v/ns p d t c = 25 c 830 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 175 v v gs(th) v ds = v gs , i d = 3ma 2.5 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 150 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1 10 12 m v dss = 175v i d25 = 150a r ds(on) 12m g = gate d = drain s = source tab = drain to-247 g d s (tab) IXFH150N17T features z international standard package z avalanche rated z 175c operating temperature z high current handling capability advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications z synchronous rectification
ixys reserves the right to change limits, test conditions, and dimensions. IXFH150N17T ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 e ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 75 118 s c iss 9800 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 1110 pf c rss 60 pf t d(on) 22 ns t r 30 ns t d(off) 58 ns t f 30 ns q g(on) 155 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 40 nc q gd 47 nc r thjc 0.18 c/w r thch 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 150 a i sm repetitive, pulse width limited by t jm 400 a v sd i f = 50a, v gs = 0v, note 1 1.2 v t rr 96 ns i rm 0.65 a q rm 13.5 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 (external) i f = 75a, v gs = 0v -di/dt = 200a/ s v r = 85v
? 2008 ixys corporation, all rights reserved IXFH150N17T fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 0.00.20.40.60.81.01.21.41.61.8 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 25 50 75 100 125 150 175 200 225 250 275 300 325 0246810121416 v ds - volts i d - amperes v gs = 10v 8v 6v 7v 5v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 75a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 150a i d = 75a fig. 5. r ds(on) normalized to i d = 75a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 40 80 120 160 200 240 280 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXFH150N17T ixys ref: t_150n17t(8w)12-02-08-a fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 300 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 85v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2008 ixys corporation, all rights reserved ixys ref: t_150n17t(8w)12-02-08-a IXFH150N17T fig. 14. resistive turn-on rise time vs. drain current 21 22 23 24 25 26 27 28 29 30 31 35 40 45 50 55 60 65 70 75 80 85 90 95 100 i d - amperes t r - nanoseconds r g = 2 ? v gs = 10v v ds = 85v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 15 20 25 30 35 40 45 50 2345678910 r g - ohms t r - nanoseconds 20 22 24 26 28 30 32 34 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 85v i d = 37a, 75a fig. 16. resistive turn-off switching times vs. junction temperature 20 22 24 26 28 30 32 34 36 38 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 55 60 65 70 75 80 85 90 95 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 85v i d = 37a i d = 75a fig. 17. resistive turn-off switching times vs. drain current 20 22 24 26 28 30 32 34 36 38 35 40 45 50 55 60 65 70 75 80 85 90 95 100 i d - amperes t f - nanoseconds 50 55 60 65 70 75 80 85 90 95 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 85v t j = 125oc t j = 25oc t j = 25oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 21 22 23 24 25 26 27 28 29 30 31 32 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? v gs = 10v v ds = 85v i d = 75a i d = 37a fig. 18. resistive turn-off switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 110 2345678910 r g - ohms t f - nanoseconds 60 80 100 120 140 160 180 200 220 240 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 85v i d = 75a i d = 37a
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